摘要
This study presents a DUV photo-detector founded upon a floating-gate-based complementary circuit unit. With a floating-gate-controlled CMOS gate, the proposed unit exhibits a widen sensing range in response to DUV dosage. Successful experimental demonstrations have elucidated the device's electrical behavior when subjected to varying durations of DUV irradiation, allowing for a timely and precise response to the dosage of DUV light.