- Title
- Comprehensive Effects of Strained Ge1-xSnx and Device Layout Arrangement on a Nano-Scaled Ge-based PMOSFET with a Short Channel
- Creators - without role
- C. C. Lee - 國立清華大學工學院動力機械工程學系T. C. ChengP. C. Huang
- Publication Details
- International SiGe Technology and Device Meeting (ISTDM 2016) International SiGe Technology and Device Meeting (ISTDM 2016)
- Identifiers
- 9957766192506774
- Academic Unit
- Department of Power Mechanical Engineering, College of Engineering, National Tsing Hua University
- Language
- Traditional Chinese
- Resource Type
- Conference paper
Conference paper
Comprehensive Effects of Strained Ge1-xSnx and Device Layout Arrangement on a Nano-Scaled Ge-based PMOSFET with a Short Channel
International SiGe Technology and Device Meeting (ISTDM 2016) International SiGe Technology and Device Meeting (ISTDM 2016)
2016
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