Abstract
This paper presents a comprehensive study of the static and dynamic characteristics of Schottky barrier diodes based on a β-phased gallium oxide (Ga2O3). The dynamic performances of β-Ga2O3 SBDs under continuous switching stress show a significant Schottky barrier height instability. The barrier height increases along with the increase of negative stress voltage (Vstress). An optimized current transient methodology for characterizing device trap information is proposed. The set of dominant trap active energy is characterized as E c-0.76 eV, -0.62 eV, and -0.47 eV. These findings provide evidence of possible instability of β-Ga2O3 based devices in power switch applications and offer a path for reducing instability issues.