Abstract
Although a significant effort was made recently in the development of binary oxide based resistive memory (RRAM) [1,2], reliability issue is still the most concern, but less addressed [3,4]. By stressing the device in high resistance state (HRS) with constant voltage of the same bias polarity during SET process, the disturbed time is found to exhibit extreme low Weibull slope (∼0.3). This characteristic can drastically shrink the reliability margin for reading process [4]. Inserting a thin Al 2 O 3 between the transition metal oxide and bottom electrode was proposed previously to improve read disturb immunity at room temperature [4]. However, the effect of high temperature (125°C) on the read disturb of this stacked layer (HfOx/Al 2 O 3 ) has not yet been studied. © 2010 IEEE.