Abstract
A Nd:YVO 4 /Cr 4+ :YAG passively Q-switched microschip laser was investigated. The laser consisted of a 1.5-mm long Nd:YVO 4 as the gain medium and a 1-mm long Cr 4+ :YAG as the saturable absorber. The transmission side of the Nd:YVO 4 was anti-reflectively coated at the 1064nm laser wavelength. Results indicated a flattened Q-switching repetition rate, a decreased pulse width and an enhanced pulse energy with increased pump power.