- Title
- Critical Role of Holes in Reliability, Robustness and Stability of GaN-on-Si HEMTs for Power and RF Applications (Invited)
- Creators - without role
- 敬源 黃
- Publication Details
- IEEE International Reliability Physics Symposium (IRPS)
- Grant note
- 國科會
- Identifiers
- 9957776961506774
- Academic Unit
- Institute of Electronics Engineering, College of Electrical Engineering and Computer Science, National Tsing Hua University
- Language
- English
- Resource Type
- Conference paper
Conference paper
Critical Role of Holes in Reliability, Robustness and Stability of GaN-on-Si HEMTs for Power and RF Applications (Invited)
IEEE International Reliability Physics Symposium (IRPS)
04/2025
Appears in keyword about Physics
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