Abstract
dc and rf characteristics of self-aligned inversion-channel In 0.53 Ga 0.47 As metal-oxide-semiconductor field-effect transistors (MOSFETs) using molecular beam epitaxy (MBE) deposited Al 2 O 3 / Ga 2 O 3 (Gd 2 O 3 ) (GGO) high κ dielectrics and TiN metal gates are reported. MOSFETs with various oxide thicknesses were fabricated. The In 0.53 Ga 0.47 As MOSFETs using Al 2 O 3 (2 nm) /GGO (5 nm) gate dielectric demonstrated a maximum drain current of 1.05 mA/μm and a peak transconductance of 714 μS/μm, both are the highest values ever reported for enhancement-mode InGaAs MOSFETs with 1 μm gate length. In addition, the same transistors exhibited excellent embedded rf properties and achieved a f T of 17.9 GHz and a f max of 12.1 GHz. The high-quality in situ MBE growth of high κ dielectrics/InGaAs has attributed to the high device performance. © 2010 American Vacuum Society.