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Demonstration of Large Polarization in Si-doped HfO2Metal-Ferroelectric-Insulator-Semiconductor Capacitors with Good Endurance and Retention
Conference paper

Demonstration of Large Polarization in Si-doped HfO2Metal-Ferroelectric-Insulator-Semiconductor Capacitors with Good Endurance and Retention

Jing-Hua Hsuen, Maximillian Lederer, Lars Kerkhofs, Yannick Raffel, Luca Pirro, Talha Chohan, Konrad Seidel, Thomas Kampfe, Sourav De and Tian-Li Wu
2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings
2023
DOI: https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134504

Abstract

Artificial Intelligence Computer Networks and Communications Computer Science Applications Hardware and Architecture Information Systems Electrical and Electronic Engineering
This paper reports that large polarization (2 Pr 35.3 μ C cm2) can be demonstrated in Si-doped Hf02 Metal-Ferroelectric-Insulator-Semiconductor Capacitors with proper annealing temperature. In addition, wake-up free characteristic as well as good retention for up to 104 seconds is observed for the devices used in the present study. It is also found that devices with different annealing temperatures lead to distinct leakage behavior, which adversely affected the cycle-to-breakdown reliability.

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