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Demonstration of PtMn-based Field-free Switching SOT MRAM
Conference paper

Demonstration of PtMn-based Field-free Switching SOT MRAM

Chia-Ping Lin, Chih-Hsiang Tseng, Yu-Shen Yen, Chih-Huang Lai, Kai-Shin Li, Jia-Min Shieh, Jack Yuan-Chen Sun, Jeng-Hua Wei and Denny D. Tang
2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023 - Proceedings
2023
DOI: https://doi.org/10.1109/INTERMAGShortPapers58606.2023.10228584

Abstract

Antiferromagnetic materials Magnetic memory Spintronics Thermal stability Energy Engineering and Power Technology Electrical and Electronic Engineering Mechanical Engineering Electronic Optical and Magnetic Materials Instrumentation
In the group of Mn-based antiferromagnetic materials, PtMn shows high enough thermal stability to fit the requirement of high temperature in BEOL. We worked on a field-free switching device with the application of PtMn, which can be integrated into perpendicular MRAM stacks and processes of BEOL. With help from ferromagnetic coupling from SAF which is pinned by PtMn, we can get field-free switching, which can further increase the pillar size compared with traditional stray-field MRAM.

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