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Demonstration of annealing-free metal-insulator-semiconductor (mis) ohmic contacts on a gan substrate using low work-function metal ytterbium (yb) and al2o3 interfacial layer
Conference paper

Demonstration of annealing-free metal-insulator-semiconductor (mis) ohmic contacts on a gan substrate using low work-function metal ytterbium (yb) and al2o3 interfacial layer

Tian-Li Wu, Yang-Yan Tseng, Chih-Fang Huang, Zih-Sin Chen, Chih-Chien Lin, Chung-Jen Chung, Po-Kai Huang and Kuo-Hsing Kao
WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, 8760323
05/2019
DOI: https://doi.org/10.1109/WiPDAAsia.2019.8760323

Abstract

Fermi level pinning Gan Mis contact Energy Engineering and Power Technology Electrical and Electronic Engineering Electronic Optical and Magnetic Materials
In this letter, the Metal-Insulator-Semiconductor (MIS) contacts are fabricated on the GaN substrates and compared to the Metal-Semiconductor (MS) contacts. To alleviate the Fermi level pinning effect at the Metal-Semiconductor interface, an Al O interfacial layer (IL) (1 ~ 3 nm) is used to form the MIS contacts. By comparing the electrical characteristics, the contact with 0nm Al O layer, i.e., MS contact, shows a lowest current compared to the contacts with an Al O IL, i.e., MIS contact. Furthermore, the current at 0.5V in the fabricated Transmission Line Measurement (TLM) device with 1nm Al O IL is 10 times higher the one without an Al O IL. This proves that inserting an Al O IL could mitigate the Fermi level pinning, resulting in a low Schottky barrier height. Finally, based on the TLM analysis, the resistivity of 5.1×10 Ω.cm is demonstrated in the MIS contact with 1nm Al O IL.

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