Abstract
Deposition of heteroepitaxial diamond on substrates of 6H-SiC single crystal by a d.c. voltage biased-enhanced microwave plasma chemical vapor deposition method has been attempted. Various concentrations of methane (CH <sub>4</sub> ) up to 10% in hydrogen (H <sub>2</sub> ) was used to evaluate its effect on epitaxy. Characterization of cross-sectional transmission electron microscopy with electron energy loss spectroscopy shows that an interlayer can form between diamond 6H-SiC, depending on the CH <sub>4</sub> concentration. With low CH <sub>4</sub> concentration, diamond was directly nucleated on 6H-SiC with an orientation relationship of diamond {111}//6H-SiC {0001} and diamond <110>//6H-SiC <1120>. (C) 2000 Elsevier Science S.A. All rights reserved. Deposition of heteroepitaxial diamond on substrates of 6H-SiC single crystal by a d.c. voltage biased-enhanced microwave plasma chemical vapor deposition method has been attempted. Various concentrations of methane (CH <sub>4</sub> ) up to 10% in hydrogen (H <sub>2</sub> ) was used to evaluate its effect on epitaxy. Characterization of cross-sectional transmission electron microscopy with electron energy loss spectroscopy shows that an interlayer can form between diamond 6H-SiC, depending on the CH <sub>4</sub> concentration. With low CH <sub>4</sub> concentration, diamond was directly nucleated on 6H-SiC with an orientation relationship of diamond {111}∥6H-SiC {0001} and diamond 〈110〉∥6H-SiC 〈112̄0〉.