Design and Fabrication of High Voltage 4H-SiC Schottky Barrier Diodes with Mesa-JTE Protection

Conference paper

Qui-Chun Kao and Chih Fang Huang

The 28th ROC Symposium on Electrical Power Engineering

2007

Abstract

SiC;Schottky Barrier;Diodes;Mesa-JTE Protection

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Title: Design and Fabrication of High Voltage 4H-SiC Schottky Barrier Diodes with Mesa-JTE Protection
Creators - without role: Qui-Chun Kao
Chih Fang Huang - 國立清華大學電機資訊學院電機工程學系
Publication Details: The 28th ROC Symposium on Electrical Power Engineering
Identifiers: 9957772280506774
Academic Unit: Institute of Electronics Engineering, College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper