Abstract
This paper proposes a new design of a Micro-LED display with a sapphire micro-reflector array. This novel technology uses an ICP etching process to fabricate a V-shaped trench in sapphire substrate. With the microloading effect, a specific sapphire micro-reflector is created under each Micro-LED, which can be used to converge the light rays and therefore, improve the display quality of a Micro-LED. In this study, the feasibility of a sapphire and GaN etching process and the optical performance of a Micro-LED have been evaluated and measured by experimentation. It was confirmed that the proposed Micro-LED display has an improved lighting performance, while increasing 55% in maximum brightness.