Abstract
This work presents a thermoelectric infrared microsensor which is designed and fabricated with TSMC CMOS-MEMS processes. The proposed device can achieve the responsivity of 432.3 V/W and time constant of 2.49 ms at 1 atm. © 2008 IEEE.
- Title
- Design and fabrication of CMOS-integrated thermoelectric IR microsensors
- Creators - without role
- Keng-Shuen Lin - National Tsing Hua UniversityRongshun Chen - National Tsing Hua University
- Identifiers
- 9781424419180; 9957777170906774
- Academic Unit
- Department of Power Mechanical Engineering, College of Engineering, National Tsing Hua University
- Language
- English
- Resource Type
- Conference paper
- Publication Details
- 2008 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, OPT MEMS, pp.106-107