Design and manufacturing of a miniaturized 2.45GHz bulk acoustic filter by high aspect ratio etching process

C.-H. Lin; H.-R. Chen; C.-H. Du; W. Fang

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Design and manufacturing of a miniaturized 2.45GHz bulk acoustic filter by high aspect ratio etching process

C.-H. Lin, H.-R. Chen, C.-H. Du and W. Fang

2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004, Vol.1, pp.336-339

2004

Abstract

Bulk acoustic device

ICP

MEMS resonator

A 2.45GHz filter is fabricated by thin film bulk acoustic wave resonator (FBAR) technology. Especially, it is designed to minimize die size and to simplify fabrication process simultaneously by using inductive coupling plasma etching. The quality factor of fabricated single resonator is 1567 and electromechanical coupling coefficient is 5.7%. The fabricated filter has minimum insertion loss around l.5dB and maximum insertion loss 3.6dB in 83.5MHz. bandwidth, which is suitable for WLAN and Bluetooth applications.

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Title: Design and manufacturing of a miniaturized 2.45GHz bulk acoustic filter by high aspect ratio etching process
Creators - without role: C.-H. Lin - Tsinghua University
H.-R. Chen - Asia Pacific Microsystems, Inc.
C.-H. Du - Asia Pacific Microsystems, Inc.
W. Fang - Tsinghua University
Identifiers: 0972842276; 9957774331506774
Academic Unit: Institute of NanoEngineering and Microsystems, College of Engineering, National Tsing Hua University
Language: English
Resource Type: Conference paper
Publication Details: 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004, Vol.1, pp.336-339

Design and manufacturing of a miniaturized 2.45GHz bulk acoustic filter by high aspect ratio etching process

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