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Design of wideband sub-harmonic receiver front-end using 0.18-μm BiCMOS technology
Conference paper

Design of wideband sub-harmonic receiver front-end using 0.18-μm BiCMOS technology

Ping-Yi Wang, Te-Lin Wu, Min-Chih Chou, Ming-Yu Chen, Yin-Cheng Chang, Da-Chiang Chang and Shawn S. H. Hsu
2015 IEEE International Wireless Symposium, IWS 2015, 7164610
07/2015

Abstract

receiver front-end SiGe BiCMOS sub-harmonic mixer (SHM) Computer Networks and Communications,Electrical and Electronic Engineering
A low-power sub-harmonic receiver front-end covering an RF frequency range of 18-21GHz with a converted IF range of 50-1550 MHz is demonstrated. The transformer-based inductive coupled resonators at the input of low-noise amplifier provide a wideband signal transformation and impedance matching effectively. Also, several circuit techniques such as G M boosted and 3D-inductors are employed for the LNA and mixer to achieve high circuit performance. The proposed receiver is fabricated using 0.18-μm SiGe BiCMOS technology with a total power consumption of 60 mW. Measured results show that the conversion gain is of 36 dB featuring an excellent gain flatness (±1dB) with the IF bandwidth up to 1.5 GHz, noise figure lower than 8.5 dB, and output P 1dB compression point higher than 3 dBm for the IF frequency, respectively.

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