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Determination of contact and intrinsic nanowire resistivity in two-contact ZnO nanowire devices
Conference paper

Determination of contact and intrinsic nanowire resistivity in two-contact ZnO nanowire devices

Y.F. Lin, W.B. Jian, Z.Y. Wu, F.R. Chen, J.J. Kai and J.J. Lin
2008 2nd IEEE International Nanoelectronics Conference, INEC 2008, pp.1112-1115
2008

Abstract

Cylindrical ZnO nanowires were synthesized to fabricate two-contact ZnO nanowire devices with the same separation distance between the two contact electrodes. Electrical properties including temperature dependence of resistance and I-V curves were recorded. According to distinct electrical behaviors and room-temperature resistance, ZnO nanowire devices can be categorized into three different types exhibiting either contact or intrinsic NW attributes. © 2008 IEEE.

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