Abstract
This study exploits the concepts of pure-oxide and symmetric metal-oxide films to design and implement a CMOS-MEMS gyroscope. Features of this approach include: (1) the main structure of gyroscope is formed by the CMOS pure-oxide layers, (2) the drive and sense electrodes are formed by the symmetric metal-oxide stacking layers. Thus, the unwanted after-process deformation due to the thin film residual stresses and the unwanted in-use thermal deformation due to the CTE mismatch of metal-dielectric films are significantly reduced. Preliminary result shows a flat structure (radius of curvature, ROC> 80mm) with 500μm×470μm footprint is achieved. Moreover, the angular rate sensitivity is 4μV/°/s when measured at atmosphere, and can be further improved using vacuum sealing.