Abstract
In this work, we report on the possibility of controlling the surface potential of extended-nano channels (ENCs) made in a system of SiO /LiNbO (LN), which can promote improvement of the proton diffusion rate. We detected the optimal thickness of a SiO film which is ∼ 5 nm, where the deposited material would not affect spontaneous polarization of the LN material, which results in enhanced protontransport in ENCs. Here, we describe the device concept, the effect of SiO thickness on the LN surface potential, demonstrate the device working principle and show its enhancement of 2.5 times in proton diffusion in comparison to the balk value.