Development of high-speed and low-power Sb-based III-V MOSFETs

Conference paper

Development of high-speed and low-power Sb-based III-V MOSFETs

K. Y. Cheng

3rd Int. Workshop on High k Dielectrics on High Mobility Channel Materials

2009

Abstract

Growth of GaInAsP quantum wire heterostructures using the strain-induced lateral-layer ordering process

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Title: Development of high-speed and low-power Sb-based III-V MOSFETs
Creators - without role: K. Y. Cheng
Publication Details: 3rd Int. Workshop on High k Dielectrics on High Mobility Channel Materials
Identifiers: 9957766631506774
Academic Unit: National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper