摘要
Ga 2 O 3 -based devices are promising candidates for next-generation high-voltage power conversion. However, their practical performance is strongly influenced by thermal resistance, junction capacitance, and dynamic stability under switching stress. In this work, a commercial-grade 1.2 kV β-Ga 2 O 3 SBD using TO-247 package is systematically evaluated from device-level characteristics to system-level DC-DC converter. Temperature-dependent pulsed I-V tests reveal a lower temperature coefficient compared to a similarly rated SiC SBD. Continuous switching stress up to 800 V and 125 °C demonstrates excellent dynamic stability, with <2% forward current degradation and negligible turn-on voltage shift. Double-pulse measurements confirm fast recovery recover time down to 18 ns. Buck and boost converter demonstrations covering 100-600 V conversion ranges achieve peak efficiencies exceeding 98% at output powers up to 600 W and junction temperature reach 175 °C. The analysis of power loss reveals that, although Ga 2 O 3 SBD offers advantages in conduction losses, the large junction capacitance elevates switching losses in SBD and MOSFET, resulting in lower overall efficiency than SiC SBD. Finally, from the system-level perspective, this article provides recommendations for future Ga 2 O 3 SBD optimization.