Abstract
For Cu pads used as under bump metallization (UBM) in flip chip technology, the diffusion behavior of Cu in the metallization layer is an important issue. In this study, isothermal interdiffusion experiments were performed at 240°C for different times with solid-solid and liquid-solid diffusion couples assembled in Cu/electroless-Ni (Ni-10 wt.% P) and Cu/electroless Ni (Ni-10 wt.% P)/ Sn-37Pb joints. The diffusion structure and concentration profiles were examined by scanning electron microscopy and electron microprobe analysis. The interdiffusion fluxes of Cu, Ni and P were calculated from the concentration profiles with the aid of Matano plane evaluation. The values of J̃ Cu , J̃ Ni and J̃ P decreased with increasing annealing time. The average effective interdiffusion coefficients on the order of 10 -14 cm 2 /s were also evaluated within the diffusion zone. The amounts of Cu dissolved in the intermetallic compounds (IMCs) Ni 3 Sn 4 and Ni 3 P that precipitate after annealing the Cu/electroless Ni/ Sn-37Pb joints were about 0.25 at.% and 0.5 at.%, respectively. For the short period of annealing, it appears that the presence of electroless Ni (EN) with the Sn-Pb soldering reaction assisted the diffusion of Cu through the EN layer.