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Direct evidence for interstitial carbon in heavily doped GaAs
Conference paper

Direct evidence for interstitial carbon in heavily doped GaAs

G. E. Hofler, J. L. Klatt, J. N. Baillargeon, K. C. Hsieh, R. S. Averback, K. Y. Cheng and G. E. Stillman
Materials Research Society 1991 Fall Meeting
1991

Abstract

carbon;GaAs

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