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Directional nickel silicide-induced crystallization of amorphous silicon channel under high-density current stressing
Conference paper

Directional nickel silicide-induced crystallization of amorphous silicon channel under high-density current stressing

C.H. Yu, P.H. Yeh and L.J. Chen
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol.237(1-2), pp.167-173
08/2005
DOI: https://doi.org/10.1016/j.nimb.2005.04.092
Appears in  keyword about Physics

Abstract

Current-induced crystallization Doping species effect Metal-induced crystallization
The effects of electric field and doping species on directional crystallization of a-Si channels under high-density current stressing have been investigated. The a-Si channels were implanted by 30 keV BF2+ or As + to a dose of 3 × 10 15 ions/cm 2 . A preferential growth of poly-Si from anode toward cathode was found on BF2+, As + and un-implanted a-Si samples. The results indicate that directional growth of poly-Si is caused by the strong electric field effect on positively charged Ni ions under high-density current stressing. © 2005 Elsevier B.V. All rights reserved.

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