Doping Engineered InSe Flakes for High Mobility Phototransistor

Christy Roshini Paul Inbaraj; Roshan Jesus Mathew; Raman Sankar; Chih-Hao Lee; Yang-Fang Chen

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Doping Engineered InSe Flakes for High Mobility Phototransistor

Christy Roshini Paul Inbaraj, Roshan Jesus Mathew, Raman Sankar, Chih-Hao Lee and Yang-Fang Chen

Optics InfoBase Conference Papers, Vol.Part F186-NOMA 2020

2020

Abstract

Electronic

Optical and Magnetic Materials

Mechanics of Materials

Sn doped InSe crystal has a reduced oxide phase and enhanced electron mobility. Along with the substrate modification, the mobility enhances to 2560 240 cm2 V-1s-1. Moreover, it exhibits a piezo-phototronic effect useful for practical implementation.

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Title: Doping Engineered InSe Flakes for High Mobility Phototransistor
Translated title: Doping Engineered InSe Flakes for High Mobility Phototransistor
Creators - without role: Christy Roshini Paul Inbaraj - Department of Engineering and System Science , National Tsing Hua University
Roshan Jesus Mathew - Department of Engineering and System Science , National Tsing Hua University
Raman Sankar - National Taiwan University
Chih-Hao Lee - Department of Engineering and System Science , National Tsing Hua University
Yang-Fang Chen - National Taiwan University
Identifiers: 9781557528209; 9957771740806774
Academic Unit: Institute of Nuclear Engineering and Science, College of Nuclear Science, National Tsing Hua University
Language: English
Resource Type: Conference paper
Publication Details: Optics InfoBase Conference Papers, Vol.Part F186-NOMA 2020

Doping Engineered InSe Flakes for High Mobility Phototransistor

Abstract

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