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Doping characteristics and transport properties of GaInAs and AlInAs grown by molecular beam epitaxy
Conference paper

Doping characteristics and transport properties of GaInAs and AlInAs grown by molecular beam epitaxy

K. Y. Cheng and A. Y. Cho
Proceedings of International Optoelectronics Workshop, p.300
1981

Abstract

GaInAs;AlInAs;molecular beam epitaxy

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