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Dry etching and low-temperature direct bonding process of lithium niobate wafer for fabricating micro/nano channel device
Conference paper

Dry etching and low-temperature direct bonding process of lithium niobate wafer for fabricating micro/nano channel device

Toshiyuki Tsuchiya, Koji Sugano, Hideki Takahashi, Hangyeol Seo, Yuriy Pihosh, Yutaka Kazoe, Kazuma Mawatari, Takehiko Kitamori and Osamu Tabata
TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems, pp.1245-1248
07/2017

Abstract

Lithium niobate magnetic neutral loop discharge reactive ion etching nanochannel proton diffusion surface activated bonding Chemical Health and Safety Instrumentation Electrical and Electronic Engineering
We have developed dry etching process of lithium niobate (LN) wafer using neutral loop discharge reactive ion etching (NLD-RIE) to fabricate both micro- and nano-channels for investigating proton diffusion enhancement in ferroelectric nanochannels. We have also developed low-temperature direct bonding process between LN wafers. Two-hundred parallel nanochannel array of 200-nm deep and wide and 400-μm long connected to two microchannels (width: 500 μm, depth: 5.9 μm) at the both ends were fabricated. We have succeeded in measuring the proton diffusion coefficient as high as 1.2×10 m /s.

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