- Title
- Dynamic On-Resistance Degradation in E-Mode GaN HEMTs Under Over-Voltage Hard Switching Stress: Insight of Physical Space and Energy Levels
- Creators - without role
- 敬源 黃
- Publication Details
- International Symposium on Power Semiconductor Devices and ICs (ISPSD)
- Grant note
- 國科會
- Identifiers
- 9957773886206774
- Academic Unit
- Institute of Electronics Engineering, College of Electrical Engineering and Computer Science, National Tsing Hua University
- Language
- English
- Resource Type
- Conference paper
Conference paper
Dynamic On-Resistance Degradation in E-Mode GaN HEMTs Under Over-Voltage Hard Switching Stress: Insight of Physical Space and Energy Levels
International Symposium on Power Semiconductor Devices and ICs (ISPSD)
06/2025
Appears in Publications (2025–Present)
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