Abstract
To achieve fast, efficient, reliable and compact power converter, this paper reports 15 V GaN HEMT featuring: (i) low sFoM of 13.1 mΩ•nC, (ii) robust reliability under constant gate and drain stress over wide temperature range from -40 °C to 150 °C in 1000 hours, (iii) dynamic Rdson and Vth free operation demonstrated in MHz switching frequency converters. The buck converter with the fabricated GaN HEMTs in half bridge configuration demonstrates over 90% efficiency at 10 MHz under conversion ratio of 5 V Vin/ 1.5~4 V Vout. When the switching frequency increases to 30 MHz, the converter still remains over 80% efficiency.