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Effect of Y2O3 doping on the electrical properties of base-metal-electroded capacitor materials
Conference paper   Peer reviewed

Effect of Y2O3 doping on the electrical properties of base-metal-electroded capacitor materials

Wei-Chun Yang, CHEN-TI HU and I-Nan Lin
Ferroelectrics, Vol.270, pp.135-140
01/01/2002

Abstract

BME capacitor MLCC Y2O3-doping
Effect of alliovalent dopants on the characteristics of (Ba 0.95 Ca 0.05 ) 1.002 (Ti 0.82 Zr 0.18 )O 3 , BTZ, base-metal-electrode capacitor materials were examined. Simultaneous addition of Y 2 O 3 (0-2.5 mol%) and MnO 2 (0.46 mol%) results in BTZ materials with high insulation resistance (IR ≥ 3 G ohm)), even when they were sintered in reduced atmosphere. In contrast, the insulation resistance (IR) of BTZ materials decreases abruptly when the La 2 O 3 content increases over 0.63 mol%. Such a behavior infers that some portion of the Y 2 O 3 -species may shift from A-site lattices to the B-site lattices, acting as accepters, when BTZ materials are heavily doped with Y 2 O 3. © 2002 Taylor & Francis.

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