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Effect of ti interlayer on the growth of carbon nanotubes on Si by microwave-heated CVD
Conference paper

Effect of ti interlayer on the growth of carbon nanotubes on Si by microwave-heated CVD

C.-C. Chuang, Y.-S. Chen, J.H. Huang, Y.M. Wong and W.P. Kang
Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004, pp.34-35
2004

Abstract

The titanium interlayer effects on the growth of carbon nanotubes on silicon were investigated using different catalysts such as palladium, nickel and cobalt. Microwave-heated chemical vapor deposition method was used to fabricate the carbon nanotubes. It was observed that the use of nickel and cobalt as catalysts on Ti-coated silicon during the growth could produce well aligned carbon nanotubes. The results show that the due to better adhesion to Si, CNT exhibit lower turn-on fields and higher attainable maximum emission current.

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