Effective repair to ultra-low-k dielectric material (k∼2.0) by hexamethyldisilazane treatment

Y.S. Mor; T.C. Chang; P.T. Liu; T.M. Tsai; C.W. Chen; S.T. Yan; C.J. Chu; W.F. Wu; F.M. Pan; Water Lur; S.M. Sze

doi:10.1116/1.1488645

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Effective repair to ultra-low-k dielectric material (k∼2.0) by hexamethyldisilazane treatment

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Effective repair to ultra-low-k dielectric material (k∼2.0) by hexamethyldisilazane treatment

Y.S. Mor, T.C. Chang, P.T. Liu, T.M. Tsai, C.W. Chen, S.T. Yan, C.J. Chu, W.F. Wu, F.M. Pan, Water Lur, …

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol.20(4), pp.1334-1338

07/2002

DOI: https://doi.org/10.1116/1.1488645

Appears in keyword about Physics

Abstract

Condensed Matter Physics

Electrical and Electronic Engineering

Hexamethyldisilazane (HMDS) treatment was provided to improve the quality of the porous organosilicate glass (POSG) film after the POSG film undergoes the photoresist (PR) removal process. In addition, O ₂ plasma ashing were investigated to realize the impact of integrated processes on the dielectric film quality. Furthermore, the electrical measurement and material analysis were used to evaluate the POSG film during the PR removal process. The resultant data was analyzed in detail.

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Title: Effective repair to ultra-low-k dielectric material (k∼2.0) by hexamethyldisilazane treatment
Translated title: Effective repair to ultra-low-k dielectric material (k∼2.0) by hexamethyldisilazane treatment
Creators - without role: Y.S. Mor - National Yang Ming Chiao Tung University
T.C. Chang - National Sun Yat-sen University
P.T. Liu - National Institutes of Applied Research
T.M. Tsai - National Yang Ming Chiao Tung University
C.W. Chen - National Yang Ming Chiao Tung University
S.T. Yan - National Yang Ming Chiao Tung University
C.J. Chu - Nanmat Technology Company
W.F. Wu - National Institutes of Applied Research
F.M. Pan - National Institutes of Applied Research
Water Lur - United Microelectronics (Taiwan)
S.M. Sze - National Yang Ming Chiao Tung University
Publication Details: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol.20(4), pp.1334-1338
Identifiers: 9957770148806774
Academic Unit: Department of Engineering and System Science, College of Nuclear Science, National Tsing Hua University
Language: English
Resource Type: Conference paper

Effective repair to ultra-low-k dielectric material (k∼2.0) by hexamethyldisilazane treatment

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