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Effects of As+-implantation on the formation of iron silicides in Fe thin films on (1 1 1)Si
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Effects of As+-implantation on the formation of iron silicides in Fe thin films on (1 1 1)Si

H.T. Lu, Y.L. Chueh, L.J. Chou, L.J. Chen and L.J. Chen
Applied Surface Science, Vol.212-213(SPEC.), pp.204-208
15/05/2003

Abstract

-FeSi2 As+-implantation FeSi
The phase transformation of iron silicides from FeSi to β-FeSi 2 on (111)Si and effects of As + -implantation on the transformation have been investigated by sheet resistance measurements, grazing incidence X-ray diffractometry (GIXRD), scanning transmission electron microscope (STEM) and energy dispersive analysis of X-ray (EDAX). Phase transformation from FeSi to β-FeSi 2 begins at 600°C and completes at 700°C. The transformation is significantly enhanced by the As + -implantation. The annealed As + -implanted samples show a very different sheet resistance versus annealing temperature behavior. Wider than 20nm decorated grain boundaries were observed in the As + -implanted sample. EDAX data show that the dopant, As, is present only in the wide decorated grain boundary areas. © 2003 Elsevier Science B.V. All rights reserved.

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