Effects of Fast Programming on Retention and Endurance in Schottky Barrier Nanowire SONOS Memories

Conference paper

Effects of Fast Programming on Retention and Endurance in Schottky Barrier Nanowire SONOS Memories

Wei Chang, Chun-Hsing Shih, Yan-Xiang Luo, Wen-Fa Wu and Chenhsin Lien

2014

Abstract

Fast Programming;Schottky Barrier Nanowire SONOS Memories

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Title: Effects of Fast Programming on Retention and Endurance in Schottky Barrier Nanowire SONOS Memories
Creators - without role: Wei Chang
Chun-Hsing Shih
Yan-Xiang Luo
Wen-Fa Wu - 國立清華大學原子科學院工程與系統科學系
Chenhsin Lien
Identifiers: 9957777738206774
Academic Unit: Department of Engineering and System Science, College of Nuclear Science, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper