Effects of Microwave Annealing on Ge pMOSFET with Hydrogen-treated Interfacial Layer

Conference paper

Kuei-Shu Chang-Liao, Chen-Chien Li, Li-Jung Liu, Mong-Chi Li, Wei-Fong Chi, Tzu-Min Lee, Tzu-Hsiang Su, Chung-Hao Fu and Yao-Jen Lee

2015 International Conference on Solid State Devices and Materials 2015 International Conference on Solid State Devices and Materials

2015

Abstract

Microwave Annealing;Ge pMOSFET;Hydrogen-treated Interfacial Layer

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Title: Effects of Microwave Annealing on Ge pMOSFET with Hydrogen-treated Interfacial Layer
Creators - without role: Kuei-Shu Chang-Liao - 國立清華大學原子科學院工程與系統科學系
Chen-Chien Li
Li-Jung Liu
Mong-Chi Li
Wei-Fong Chi
Tzu-Min Lee
Tzu-Hsiang Su
Chung-Hao Fu
Yao-Jen Lee
Publication Details: 2015 International Conference on Solid State Devices and Materials 2015 International Conference on Solid State Devices and Materials
Identifiers: 9957777520106774
Academic Unit: Institute of Nuclear Engineering and Science, College of Nuclear Science, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper