Abstract
The electrical characteristics and microstructures of p-type and n-type (100) GaAs bonded interfaces were systematically investigated. Experimental results indicated that GaAs did not bond directly to itself, but via an amorphous oxide layer at 400°C. When temperatures increased above 400°C, the oxide bonded area declined and finally disappeared. For p-type bonded GaAs, electrical resistance decreased with bonding temperature. As for n-type (100) GaAs, electrical resistance decreased with bonding temperature. However, the resistance increased with temperatures exceeding 850°C due to the thermal conversion and in-diffusion of interfacial native oxide.