Abstract
The formation of iron silicides on (001)Si and the effects of BF 2 + -, As + - and P + -implantation on the phase transformation have been investigated. All implantation species were found to enhance the growth of light-emitting β-FeSi 2 with the effects of P + - and As + -implantation most and least pronounced, respectively. The transformation temperature from FeSi to β-FeSi 2 was lowered from 700 to 600 °C and the formation of β-FeSi 2 was completed at 700 °C. The transformation of β-FeSi 2 from FeSi was found to be by clustered growth. Grain boundaries were observed to be decorated with As atoms in the As + -implanted samples annealed at 700-800 °C. The As-rich grain boundaries disappeared after 900 °C annealing. © 2003 Elsevier B.V. All rights reserved.