Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based leds

Ji-Hao Cheng; Wei Chih Peng; YewChung Sermon Wu; Hao Ouyang

doi:10.1149/1.2731196

Back

Conference paper

Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based leds

Ji-Hao Cheng, Wei Chih Peng, YewChung Sermon Wu and Hao Ouyang

ECS Transactions, Vol.6(2), pp.285-287

2007

DOI: https://doi.org/10.1149/1.2731196

Abstract

The KrF pulsed excimer laser (248 nm) and the frequency-tripled Nd YAG laser (355nm) were used to separate GaN thin films from sapphire substrates. The effect of these two laser sources on the reverse-bias leakages of InGaN-GaN light-emitting diodes (LEDs) were studied. © The Electrochemical Society.

Metrics

1 Record Views

Details

Title: Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based leds
Creators - without role: Ji-Hao Cheng - Department of Materials Science and Engineering , National Chiao Tung University
Wei Chih Peng - Department of Materials Science and Engineering , National Chiao Tung University
YewChung Sermon Wu - Department of Materials Science and Engineering , National Chiao Tung University
Hao Ouyang - Department of Materials Engineering , National Chung Hsing University
Publication Details: ECS Transactions, Vol.6(2), pp.285-287
Identifiers: 9781566775519; 9957767100906774
Academic Unit: Department of Materials Science and Engineering, College of Engineering, National Tsing Hua University
Language: English
Resource Type: Conference paper

Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based leds

Abstract

Related links

Metrics

Details

National Tsing Hua University Social media