Abstract
The growth of titanium suicide was investigated in sub-monolayer Ti deposited on Si(111)-7 × 7. The formation of nanorod and cluster structures was observed for 600 and 700°C deposited samples. In samples heated to 800°C, titanium silicide structures transformed to clusters. C49-TiSi 2 nanorods were found to orient along three equivalent Si(22̄0) directions with C49-TiSi 2 (200)//Si(22̄0). Deposition of sub-monolayer Ti at a high temperature was found to contribute to the lowering of the formation temperature of C49-TiSi 2 . The lowering of C49-TiSi 2 growth temperature on heated substrate is attributed to smaller lattice mismatch between C49-TiSi 2 (200) and Si(22̄0).