Abstract
This work experimentally and theoretically investigates the effects of thermally-activated diffusion on the depth profiles of nickel atoms in copper. Nickel ions of 72 keV and 5 × 10 15 ions/cm 2 were implanted into copper targets at elevated temperatures of 200, 400 and 500 °C, respectively. The experimental nickel depth profiles were obtained by the secondary ion mass spectrometry (SIMS). The calculated profiles were obtained using a thermally-activated diffusion model in which both the radiation-enhanced diffusion (RED) and radiation-induced segregation (RIS) are considered. Furthermore, lattice dilation and preferential sputtering were taken into account by means of an appropriate coordinate transformation. The results indicated a strong temperature-dependence of nickel depth profiles. In addition, the nickel depth profiles tend to broaden and surface concentration increase with temperatures. © 2005 Elsevier B.V. All rights reserved.