Abstract
Metal oxide semiconductor field effect transistors (MOSFET) with SiGe channel and higher-k gate dielectric are studied in this work. Samples with TaON/HfO 2 or TiON/HfO 2 stacks show larger drain current, transconductance, and smaller subthreshold swing than that with single HfO 2 layer. In addition, the reliability of SiGe MOSFET device is clearly improved with TaON/HfO 2 stacks in terms of degradation of Gm and Vth after hot-carrier stress. The integration of SiGe channel with TaON/HfO 2 higher-k dielectric is useful for high-performance MOSFETs. © 2011 IEEE.