Abstract
Metal-Semiconductor crossed carbon nanotube junction was prepared byadsorption of carbon nanotubes on Si/SiO2Si/SiO2 substrate with predefinedelectrode contacts. The Schottky barrier was formed in the contact region due to the charge transfer from the metallic tube to semiconducting tube. The charge transport was strongly modified by the formation of barrier, leading to pronounced rectifying behavior. The results were modeled using conventional thermoionic emission theory. The ideality factor in diode is 5.8 eV at room temperature and increases as raising operating temperature.