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Electron beam patterning of epitaxial CaF2 and Ca0.5Sr0 5F2/(100)GaAs
Conference paper   Peer reviewed

Electron beam patterning of epitaxial CaF2 and Ca0.5Sr0 5F2/(100)GaAs

Y. Hirose, S. Horng, A. Kahn, R. Pfeffer and C. Wrenn
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol.10(4), pp.960-964
1992

Abstract

The electron beam patterning of crystalline CaF2 and Ca0.5Sr-0.5F2 thin films grown by molecular-beam epitaxy is demonstrated. The mechanism leading to patterning is the removal of fluorine through high energy electron beam exposure and dissolution of the resulting metal oxide in a water-based solution. A scanning Auger microprobe and a scanning electron microscope are used as exposing tools. The development of the films is performed either in deionized water or in a weak HCl solution. The chemical analysis of the patterned features confirms the development of small windows. The feasibility of the fabrication of micrometers features is verified. © 1992, American Vacuum Society. All rights reserved.

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