Abstract
The Ga/Si(1 1 2) interface consists of a self-assembled, mesoscopic array of "atomic wires" on a high-index Si(1 1 2) surface. The structural uniformity of the atomic-wires or "quantum-wire array" appears far superior to those created by nano-lithography or STM atom manipulation, which presents an interesting opportunity to explore electronic transport in atomic wires of mesoscopic length. The structure and electronic structure of the atomic-wire array is investigated by means of first-principles total-energy calculations and photoemission experiments. The electronic conduction channels appear to be orthogonal to the crystallographic chains. © 2002 Published by Elsevier Science B.V.