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Embedded 2Mb ReRAM macro with 2.6ns read access time using dynamic-trip-point-mismatch sampling current-mode sense amplifier for IoE applications
Conference paper

Embedded 2Mb ReRAM macro with 2.6ns read access time using dynamic-trip-point-mismatch sampling current-mode sense amplifier for IoE applications

Chieh-Pu Lo, Wen-Zhang Lin, Wei-Yu Lin, Huan-Ting Lin, Tzu-Hsien Yang, Yen-Ning Chiang, Ya-Chin King, Chrong-Jung Lin, Yu-Der Chih, Tsung-Yung Jonathon Chang, …
IEEE Symposium on VLSI Circuits, Digest of Technical Papers, pp.C164-C165
08/2017
DOI: https://doi.org/10.23919/VLSIC.2017.8008467

Abstract

ReRAM sense amplifier Electronic Optical and Magnetic Materials Electrical and Electronic Engineering
Recent embedded ReRAM has a small resistance-ratio (R-ratio), which results in a small read sensing margin (I SM ). A larger BL current (I BL ) increases the input offset (I OS ) of current-mode sense amplifiers (CSA), resulting in low-yield read operations and long read access times (T CD ). This work proposes an I BL -aware small-I OS CSA, using a dynamic trip-point-mismatch sampling (DTPMS) scheme to increase tolerance for small I SM and residual BL precharge current (I PRE ) in order to improve memory yield and speed up T CD in cases of small R-ratio. A fabricated 65nm 2Mb ReRAM macro achieved T CD =2.6ns at VDD=1V. For the first-time, a ReRAM macro with sub-3ns T CD is presented.

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