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Embedded Tunable Near Infrared Sensor with Programmable Potential Barrier on Nano-meter CMOS Platforms
Conference paper

Embedded Tunable Near Infrared Sensor with Programmable Potential Barrier on Nano-meter CMOS Platforms

Zih-Hong Chen, Chien-Ping Wang, Po-Hsiang Huang, Yue-Der Chih, Jonathan Chang, Chrong Jung Lin and Ya-Chin King
2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings, pp.274-276
07/2018
DOI: https://doi.org/10.1109/EDTM.2018.8421500

Abstract

CMOS compatible gateless NIR Sensor Electrical and Electronic Engineering Industrial and Manufacturing Engineering Electronic Optical and Magnetic Materials
A novel near-infrared sensor implemented by nano-scaled CMOS technologies is proposed and demonstrated. This NIR sensing device consists of a gateless device, enabling light penetration into the channel region with tunable surface potential. With adjustable channel barrier, this near-IR sensor also features full compatibility to CMOS processes as well as a dynamic responsivity with the capability of extending its sensing range up to 60dB.

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