Abstract
Local and selective far-infrared ray laser annealing (FIR-LA) process with very short heating duration (≤100μs) and low substrate temperature (≤400oC) enables sequentially stacked gate-first nanowire FETs (NWFETs), including 3D <sup>+</sup> Si NWFET and poly-Ge junctionless (JL) NWFET, and BEOL compatible monolithic 3D <sup>+</sup> nanoelectronics. The 3D <sup>+</sup> Si NWFETs, demonstrated by green nano-second laser crystallization (GNS-LC) and FIR-LA processes exhibit steep subthreshold swing (<90mV/dec.) and high driving current (n-type: 310μA/μm and p-type: 220μA/μm). The 7nm poly-Ge JLNWFET shows high I <sub>on</sub> /I <sub>off</sub> ratio (>5×10 <sup>4</sup> ) and small DIBL. Furthermore, the thus fabricated low driving voltage 6T SRAM shows a static noise margin (SNM) of 130 mV at V <sub>d</sub> =0.4V enabling the low power and low cost 3D <sup>+</sup> IC for internet of things (IoTs).