Abstract
A monolithic 3D image sensor is demonstrated by sequentially fabricating large-Area (>2cm×2cm) monolayer (<1nm) transition metal dichalcogenide (TMD) phototransistor array on top of a 3D logic/memory hybrid 3D <sup>+</sup> IC connected by high density interconnect. The photocurrent of the monolayer MoS2 phototransistor shows a linear response to the incident laser power density and exhibits high responsivity (>20A/W). The bottom 3D stackable poly-Si nanowire FET, fabricated by low thermal budget process (T <sub>sub</sub> <400°C), represents steep subthreshold swing (<120mV/dec.) and high driving current (>200uA/um). The low driving voltage 6T SRAM shows a static noise margin (SNM) of 150 mV at V <sub>DD</sub> =0.5V. Such integration of large-Area monolayer TMD phototransistor array on logic/memory hybrid 3D <sup>+</sup> IC enables the low power and low cost monolithic 3D image sensor.