Abstract
High-dielectric-constant (high-k) dielectric/metal gate stacked film has emerged as one of the most challenges for future MOS device scaling [1]. A progression from Hf-based dielectrics (with -value 20) to higher- dielectrics might be required [2]. La2O3 with a higher dielectric constant is a very attractive material [3]. Moreover, the enhanced characteristics of HfO2-gated MOS devices can be achieved by Ta incorporation [4]. We therefore attempt to investigate the m of Ta deposited on HfLaTaO dielectric, the Egopt of HfLaTaO dielectric, the B at Ta/HLaTaO interface to gain better physical insights into the energy band diagram of Ta/HfLaTaO/IL/P-Si(100) stacked structure. © 2011 IEEE.