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Enhanced CDM-robustness for the packaged IC with the extra bonding wire to the die-attach plate
Conference paper

Enhanced CDM-robustness for the packaged IC with the extra bonding wire to the die-attach plate

Tzu-Cheng Kao, Jian-Hsing Lee, Chen-Hsin Lien, Chih-Hsien Wang, Kuang-Cheng Tai and Hung-Der Su
IEEE International Reliability Physics Symposium Proceedings, Vol.2015-May, pp.EL61-EL65
26/05/2015

Abstract

Charged device model (CDM) Electrostatic-discharge (ESD) Silicon on insulator (SOI)
From the experimental measurements, the dominant charge source for a packaged IC chip during a charged-device model (CDM) ESD event is the capacitor between the die-attach plate and the metal bus line, CSUB. By adding a bonding wire between the die-attach plate and the Vss pin, a parallel inductor to the CSUB can be created. The CDM-robustness for the packaged IC chip is significantly improved because of this parallel LC resonance circuit. © 2015 IEEE.

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